Manganese tin sputtering targets (Mn3Sn)产品概况

 The antiferromagnetic transition temperature of Mn3Sn is 420 K.

The nonlinear antiferromagnetic Mn3Sn polycrystalline films have significantly demonstrated many excellent physical properties, such as abnormal Hall effect (AHE), abnormal Nernst effect (ANE), and become an important candidate material for the next generation of room temperature spintronic devices.