IGZO sputtering targets (In2O3-Ga2O3-ZnO)产品概况

IGZO is an amorphous oxide containing indium, gallium and zinc, and its carrier mobility is 20-30 times that of amorphous silicon. IGZO is used as a channel material in the new generation high-performance thin film transistor (tft), which can greatly improve the charging and discharging rate of TFT to the pixel electrode, improve the response speed of pixels, and achieve faster refresh rate. At the same time, faster response also greatly improves the line scanning rate of pixels, making it possible for ultra-high resolution in TFT-LCD.