Germanium antimony tellurium sputtering targets (Ge2Sb2Te5)产品概况

As a new type of nonvolatile semiconductor memory, phase change memory is considered to have the potential to replace memory and flash memory with colleagues due to its fast reading speed, high erasable times, non-destructive reading, small device size and low power consumption. Ge-Sb-Te series alloys are currently recognized as relatively mature phase change materials, especially Ge2Sb2Te5 (GST) with better comprehensive performance.