Germanium Tin Alloy Granule（Ge-Sn）产品概况

Germanium and tin are both Group IV elements, and their alloy (Ge1-xSnx) has the same diamond structure as silicon (Si). In particular, it is theoretically predicted that when the Sn content reaches 6% - 11%, the energy band of the germanium tin alloy will change from the indirect band gap to the direct band gap, which is of great significance for realizing high efficiency and low cost silicon based optoelectronic chips. Germanium tin alloy thin films with high tin content are used to realize various devices in photonics and optoelectronics in the near, middle and far infrared range, such as photodetectors, light-emitting diodes, metal oxide semiconductor field effect transistors. Germanium tin alloy is a material with great potential in energy band engineering, and has broad application prospects in electronic and optoelectronic fields.